Proceedings Paper
Dislocation evaluation of GaN etched by photoenhanced KOH solution by atomic force microscopy| Format | Member Price | Non-Member Price |
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Paper Abstract
Atomic force microscopy (AFM) was used to investigate the surface topography of GaN grown by radio frequency plasma assisted molecule beam epitaxy and etched with a 1.0 M KOH solution in a photoenhanced process. Whiskers were observed in AFM photo and correlated with dislocations. Dislocations density was evaluated from whiskers density, and confirmed by x-ray 2D triple axis mapping estimated results.
Paper Details
Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408409
Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408409
Show Author Affiliations
Zhibiao Zhao, Shanghai Institute of Metallurgy (China)
Ming Qi, Shanghai Institute of Metallurgy (China)
Ming Qi, Shanghai Institute of Metallurgy (China)
Aizhen Li, Shanghai Institute of Metallurgy (China)
Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
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