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Proceedings Paper

Si growth on the Si(III)3x3R30-B surface phase depending on the type of surface phase formation and initial boron coverage
Author(s): A. P. Shaporenko; V. V. Korobtsov; V. V. Balashev
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Paper Abstract

Reflection high energy electron diffusion (RHEED) is used to study the Si growth on a Si(111)(root)3X(root)3-B surface, prepared by various procedures. The analysis of RHEED patterns, specular beam intensity oscillations and dependencies of specular beam intensity on incidence angle (rocking curves), shows that the Si growth mode and epilayers quality depend on both an initial boron coverage and the way of (root)3X(root)3-B surface phase formation. Increase of transition temperature, at which Si growth mode converts from layer-by-layer to step-flow growth mode, is discussed in terms of the theory of surfactant-mediated growth on semiconductor surfaces.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408407
Show Author Affiliations
A. P. Shaporenko, Institute of Automation and Control Processes (Russia)
V. V. Korobtsov, Institute of Automation and Control Processes (Russia)
V. V. Balashev, Institute of Automation and Control Processes (Russia)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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