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Proceedings Paper

Strains in Si substrate induced by formation of Ge islands
Author(s): Weirong Jiang; Zuimin Jiang; Bin Shi; Hui Xiong; D. Z. Hu; D. W. Gong; Y. L. Fan; Xiaoming Jiang; Q. J. Jia; W. L. Zheng; D. C. Qian
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Paper Abstract

Grazing incidence x-ray diffraction measurements at different grazing angles for self-organized Ge dots grown on Si(001) are carried out by using synchrotron radiation as a light source. Deformation strains in the substrate underneath or surrounding the dots induced by formation of Ge quantum dots are investigated. Besides a tensile strain existing underneath the dots, a peak located at the higher angle side of Si(220) or Si(400) is observed for the first time, the origin of this peak is attributed to the near surface compressive strain in the peripheral substrate regions surrounding the Ge dots. This compressive strain corresponds to a -0.8% lattice constant change parallel to the interface.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408406
Show Author Affiliations
Weirong Jiang, Fudan Univ. (China)
Zuimin Jiang, Fudan Univ. (United States)
Bin Shi, Fudan Univ. (China)
Hui Xiong, Fudan Univ. (China)
D. Z. Hu, Fudan Univ. (China)
D. W. Gong, Fudan Univ. (China)
Y. L. Fan, Fudan Univ. (China)
Xiaoming Jiang, Institute of High Energy Physics (China)
Q. J. Jia, Institute of High Energy Physics (China)
W. L. Zheng, Institute of High Energy Physics (China)
D. C. Qian, Institute of High Energy Physics (China)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications

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