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Proceedings Paper

InP and InGaAsP materials grown by solid-source molecular beam epitaxy
Author(s): Jing-Hui Lu; Zhi-Biao Hao; Zai-Yuan Ren; Yi Luo
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Paper Abstract

We report all-solid-source molecular beam epitaxy growth of InP and InGaAsP semiconductor materials using a three- temperature-zone valved cracker cell based upon a homemade MBE system. High quality InP film was grown with surface defect density of 65 cmMIN2 and unintentional doping concentration of 1 X 1016 cm-3. Substrate temperature is found to play an important role on surface morphology, growth rate and p-doping characteristic of the InP epitaxial layer. For InAsyP1-y, incorporation of As with In seems to increase linearly for As fraction less than 0.6, and independent of As flux when As fraction is greater than 0.9. In0.56Ga0.44As0.94P0.06 lattice matched to InP has been grown with low temperature PL spectrum peak at 1507 nm and FWHM of 9.8 meV.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408404
Show Author Affiliations
Jing-Hui Lu, Tsinghua Univ. (China)
Zhi-Biao Hao, Tsinghua Univ. (China)
Zai-Yuan Ren, Tsinghua Univ. (China)
Yi Luo, Tsinghua Univ. (China)

Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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