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Proceedings Paper

Platinum silicide formation during pulsed laser annealing prepared by pulsed laser deposition
Author(s): Meicheng Li; Xuekang Chen; Jing Wang; Jianping Yang; Gan Wu; Liancheng Zhao
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Paper Abstract

The formation of PtSi ultra-thin film prepared by pulsed laser deposition during pulsed laser annealing has been studied. The growth sequence of the Pt2Si and the PtSi phases that evolved as the result of the diffusion reaction in the bilayers was monitored by X-ray photoelectron spectrum (XPS). The structure characteristics of PtSi thin films prepared by different preparing conditions were investigated by X-ray diffraction and XPS. Compared to conventional furnace anneal, we got superior uniformity, lower continuous film thickness of the resulting PtSi layers and smoother PtSi/Si interfaces.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408391
Show Author Affiliations
Meicheng Li, Harbin Institute of Technology (China)
Xuekang Chen, Lanzhou Institute of Physics (China)
Jing Wang, Lanzhou Institute of Physics (China)
Jianping Yang, Lanzhou Institute of Physics (China)
Gan Wu, Lanzhou Institute of Physics (China)
Liancheng Zhao, Harbin Institute of Technology (China)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications

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