Share Email Print
cover

Proceedings Paper

LPE-grown high-quality InGaAsP/GaAs semiconductor lasers
Author(s): Jinhua Yang; Xiaohua Wang; Zhonghui Li; Genzhu Wu; Xingde Zhang
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

High power InGaAsP/GaAs separate confinement heterostructure single quantum well lasers have been grown by liquid phase epitaxy (LPE). The maximum output power as high as 4 W has been obtained with the threshold current density 300 A/cm2 and the external differential quantum efficiency 80%. Measurements and theoretical analysis showed that the wafers grown by LPE are in good agreement with design and can be comparable to that grown by MBE and MOCVD.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408376
Show Author Affiliations
Jinhua Yang, Changchun Institute of Optics and Fine Mechanics (China)
Xiaohua Wang, Changchun Institute of Optics and Fine Mechanics (China)
Zhonghui Li, Changchun Institute of Optics and Fine Mechanics (China)
Genzhu Wu, Changchun Institute of Optics and Fine Mechanics (China)
Xingde Zhang, Changchun Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

© SPIE. Terms of Use
Back to Top