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Proceedings Paper

P-type polycrystalline Si films prepared by aluminum-induced crystallization
Author(s): Zhenrui Yu; Yasuhiro Matsumoto
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Paper Abstract

p-type poly-Si thin films were prepared by aluminum induced crystallization (AlC) and doping of a-Si:H. The a-Si:H precursors were deposited by plasma enhanced chemical vapor deposition on glass substrates and then covered with thin Al layers of different thickness. The crystallization was performed by conventional thermal annealing. X-ray diffraction and secondary ion mass spectroscopy measurements were carried out to study the structure change and the Al profile in the annealed films. Resistivity, Hall mobility and carrier concentration were also measured. Results showed that poly-Si films could be obtained by annealing a-Si:H in contact with a thin Al layer at 450 - 550 degree(s)C for 5 - 60 minutes. The crystallized films are p-type and have low resistivity, high Hall mobility and carrier concentration of 0.06 (Omega) cm, 20 cm2/Vs and approximately 1018 cm-3, respectively, largely improved compared with the reported results.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408354
Show Author Affiliations
Zhenrui Yu, Nankai Univ. (China)
Yasuhiro Matsumoto, Ctr. de Investigacion de Estudios Avanzados del IPN (Mexico)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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