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Proceedings Paper

Comparison of PbTiO3 and BaTiO3 buffer layers for sol-gel-derived PZT thin films
Author(s): Laiqing Luo; Jinrong Cheng; Zhongyan Meng
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Paper Abstract

Pb(Zr,Ti)O3 (PZT) thin films with different thickness of PbTiO3 (PT) and BaTiO3 (BT) buffer layers were prepared by using a sol-gel spin-coating process respectively, followed by rapid thermal annealing. The experimental results indicated that both PT and BT could offer nucleation sites to lower the activation energy for the crystallization of PZT thin films, leading to a low annealing temperature and that PZT thin films with PT buffer layer annealed at 600 degree(s)C for 30 min are highly oriented. The ferroelectric properties of the films are strongly affected by the buffer layer. The different microstructures and dielectric properties of PZT films with PT and BT buffer layers are discussed.

Paper Details

Date Published: 29 November 2000
PDF: 5 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408353
Show Author Affiliations
Laiqing Luo, Shanghai Univ. (China)
Jinrong Cheng, Shanghai Univ. (China)
Zhongyan Meng, Shanghai Univ. (China)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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