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Proceedings Paper

(Ta2O5)0.92(TiO2)0.08 thin films prepared by pulsed laser deposition
Author(s): Yijian Jiang; Li Zhang; Deshu Zou; Tiechuan Zuo
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Paper Abstract

(formula available in paper)thin films have been deposited on Si substrate by 248 nm pulsed laser deposition in O2 gas environment. The structure and properties of (formula available in paper)polycrystalline thin film were investigated as a function of the deposition temperature, oxygen pressure and the substrate-target distance. The film with the thickness of 190 nm showed a dielectric constant (epsilon) r equals 56.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408352
Show Author Affiliations
Yijian Jiang, Beijing Polytechnic Univ. (China)
Li Zhang, Beijing Polytechnic Univ. (China)
Deshu Zou, Beijing Polytechnic Univ. (China)
Tiechuan Zuo, Beijing Polytechnic Univ. (China)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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