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Proceedings Paper

Properties of oriented (Ba,Sr)TiO3 thin films
Author(s): Wen Ding; Zhongyan Meng
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Paper Abstract

Ba0.7Sr0.3TiO3 thin film/Ba0.5Sr0.5TiO3 buffer layer/Pt/Ti/SiO2/Si(100) multilayer structures were investigated. The buffer layer was obtained from a highly dilute solution (0.1 M) by sol-gel technique through rapid thermal process. X-ray diffraction patterns show that the upper main BST film is preferential oriented and good in-plane relationship of BST(111)//Pt(111). After using the buffer layer, the leakage current was reduced two orders of magnitude. The dielectric properties are much better than those of the thin films without buffer layer at the same thickness of 150 nm.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408351
Show Author Affiliations
Wen Ding, Shanghai Univ. (China)
Zhongyan Meng, Shanghai Univ. (China)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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