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Proceedings Paper

Optical properties of MBE GaAs films on SrTiO3 (100) substrates
Author(s): P. P. Chen; Wei Lu; Y. D. Chen; Z.L. Miao; Z.F. Li; Xue Chu Shen; Q. X. Zhao
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Paper Abstract

This paper reports the molecular beam epitaxy growth of the GaAs films on the SrTiO3 (100) substrates. The microstructures of the films are characterized by XRD and SEM. SEM results show the different shapes of islands at different thickness. Micro-Raman studies show that the crystal lattice vibrations of the GaAs films are similar to that of GaAs bulk material. Using the photo modulated reflectance spectroscopy and photoluminescence measurement techniques, optical transitions close to GaAs band gap energy are observed, and large blue shifts are observed.

Paper Details

Date Published: 29 November 2000
PDF: 3 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408348
Show Author Affiliations
P. P. Chen, Shanghai Institute of Technical Physics (China)
Wei Lu, Shanghai Institute of Technical Physics (China)
Y. D. Chen, Shanghai Institute of Technical Physics (China)
Z.L. Miao, Shanghai Institute of Technical Physics (China)
Z.F. Li, Shanghai Institute of Technical Physics (China)
Xue Chu Shen, Shanghai Institute of Technical Physics (China)
Q. X. Zhao, Chalmers Univ. of Technology (Sweden)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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