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Proceedings Paper

Electronic and structural properties of InN thin films grown by MOMBE on sapphire substrates
Author(s): Jochen Aderhold; V. Yu. Davydov; F. Fedler; Harald Klausing; David Mistele; T. Rotter; O. Semchinova; Jens Stemmer; Jurgen Graul
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Paper Abstract

The development of high quality semiconductor thin films for different applications is a demanding problem in material science. InN has not been an intensively studied as AlN and GaN. There is relatively little information on the fundamental optical properties, charge carrier transport, and the properties and behavior of electrically active defects in the material. The absence of good-quality material lead even to conflicting data reported in the literature concerning the optical gap and band structure. In this publication it will be shown that InN thin films can be successfully grown using the MO MBE method. For the first time the proper choice of growth conditions allows to obtain good quality InN thin films with a charge carrier concentration as low as 8.8 X 1018 cm-3.

Paper Details

Date Published: 29 November 2000
PDF: 5 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408343
Show Author Affiliations
Jochen Aderhold, Univ. of Hannover (Germany)
V. Yu. Davydov, A.F. Ioffe Physico-Technical Institute (Russia)
F. Fedler, Univ. of Hannover (Germany)
Harald Klausing, Univ. of Hannover (Germany)
David Mistele, Univ. of Hannover (Germany)
T. Rotter, Univ. of Hannover (Germany)
O. Semchinova, Univ. of Hannover (Germany)
Jens Stemmer, Univ. of Hannover (Germany)
Jurgen Graul, Univ. of Hannover (Germany)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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