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Proceedings Paper

(Ba0.5Sr0.5)TiO3 thin films prepared by excimer laser method for dynamic random access memory
Author(s): Hao-shuang Gu; Guang Yang; Jie Zhu; You-qing Wang
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Paper Abstract

(Ba0.5Sr0.5)TiO3 (BST) thin films have been deposited on Si(100) substrates by excimer laser (308 nm) ablation at 600 degree(s)C, the thickness of BST films is 400 nm. The capacitance-voltage characteristics and current-voltage characteristics of the BST films were studied. The dielectric constant of BST films is 300, and the dissipation factor is 0.015 at 1 MHz. The leakage current density is 2 X 10-9 A/cm2 at 2 V. The charge storage density is 35 fC/micrometers 2 at an applied electric field of 0.125 MV/cm.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408337
Show Author Affiliations
Hao-shuang Gu, Hubei Univ. (China)
Guang Yang, Hubei Univ. (China)
Jie Zhu, Hubei Univ. (China)
You-qing Wang, Huazhong Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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