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Proceedings Paper

Characterization of PZT thick films derived from sol-gel techniques
Author(s): Jinrong Cheng; Laiqing Luo; Zhongyan Meng
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Paper Abstract

Crack free and preferred orientation Pb(ZrxTi1-x)O3 (x equals 0.45) thick films were prepared onto Pt(111)/Ti/TiO2/Si substrates by sol-gel and RTA techniques. Dielectric constants of PZT films increase with increasing the thickness. The as-prepared PZT films exhibited self-poling phenomenon and intrinsic piezoelectric responses. The PZT thick and thin films have different self- poling and poling effects. The internal bias field contributed to the intrinsic piezoelectric responses.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408336
Show Author Affiliations
Jinrong Cheng, Shanghai Univ. (China)
Laiqing Luo, Shanghai Univ. (China)
Zhongyan Meng, Shanghai Univ. (China)

Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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