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Proceedings Paper

Effects of annealing temperature and time on the structure and ferroelectricity of sol-gel-derived Ba0.8Sr0.2TiO3 thin films from highly diluted precursor solutions
Author(s): Jian-Gong Cheng; Jun Tang; Shaoling Guo; Junhao Chu
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Paper Abstract

Ba0.8Sr0.2TiO3 thin films were prepared from a high dilute precursor solution by a sol-gel process using a layer-by-layer heat treatment method. The annealing temperature ranged from 600 to 700 degree(s)C and the annealing time ranged from 5 to 15 min. Analysis by X-ray diffraction, Raman spectroscopy and field emission scanning electron microscopy showed that the annealing temperature and time strongly affected the structure of the films. The crystallinity and grain size of the films increased with the annealing temperature increasing. The grain size of the films annealed at 700 degree(s)C increased from 80 to 200 nm when the annealing time increasing from 5 to 15 min, and the film annealed at 700 degree(s)C for 15 min showed a pure columnar structure. Electrical measurements showed the ferroelectricity of the films annealed at 700 degree(s)C became better with the annealing time increasing. The film annealed at 700 degree(s)C for 15 min showed a remnant polarization of 3.5 (mu) C/cm2 and a coercive field of 83 kV/cm.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408335
Show Author Affiliations
Jian-Gong Cheng, Shanghai Institute of Technical Physics (Germany)
Jun Tang, Shanghai Institute of Technical Physics (China)
Shaoling Guo, Shanghai Institute of Technical Physics (China)
Junhao Chu, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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