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Proceedings Paper

Preparation of PZT thick films by 0-3 composite method
Author(s): Xiyun He; Aili Ding; Pingsun Qiu; Weigen Luo
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Paper Abstract

PbZr0.40Ti0.60O3 (PZT) thick films are prepared on Pt/Ti/SiO2/Si substrate by a sol gel based 0 - 3 composite method. The influence of processing variable including powder characteristics, solvents feature and annealing condition is investigated. Microstructure and electric property of PZT thick films are examined and analyzed. Optimum parameters of process are suggested. PZT thick film of 10 micrometers thickness with excellent ferroelectric and dielectric properties has been obtained (Pr 24 (mu) C/cm2, (epsilon) r 680 at 1 kHz.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408334
Show Author Affiliations
Xiyun He, Shanghai Institute of Ceramics (China)
Aili Ding, Shanghai Institute of Ceramics (China)
Pingsun Qiu, Shanghai Institute of Ceramics (China)
Weigen Luo, Shanghai Institute of Ceramics (China)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications

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