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Proceedings Paper

Textured growth of [100] diamond on Al2O3 ceramic substrate by microwave plasma chemical vapor deposition
Author(s): Zhijun Fang; Yiben Xia; Jianhua Ju; Linjun Wang; Weli Zhang
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Paper Abstract

[100]-textured diamond thin film on a rough and randomly oriented Al2O3 substrate has been achieved by MPCVD. The cyclic technique--the cyclic modulation of the H2 plasma (etching process) and CH4+H2 plasma (growing process)--has been applied during the growth stage with various etching/growth time ratios. The dependencies of properties and morphologies of the films on the etching time interval were well explained by the selective etching of hydrogen ions to non-[100]- oriented grains. The strong effects of different methane concentrations and substrate temperatures on the [100]-textured growth were also concluded. Growth mechanisms of [100]-textured diamond thin films on Al2O3 substrates were discussed based on the detailed results of Scanning Electron Microscopy, Raman Spectrum and X-ray Diffraction Spectrum.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408330
Show Author Affiliations
Zhijun Fang, Shanghai Univ. (China)
Yiben Xia, Shanghai Univ. (China)
Jianhua Ju, Shanghai Univ. (China)
Linjun Wang, Shanghai Univ. (China)
Weli Zhang, Shanghai Univ. (China)

Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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