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Proceedings Paper

Heteroepitaxial film of silicon carbide grown on sapphire with a nitride buffer layer
Author(s): Jianping Wang; Yue Hao; Jun Peng
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Paper Abstract

Heteroepitaxial growth of single crystal Silicon Carbide (SiC) films on a novel compound substrate is discussed. Sapphire has successfully been used as substrate material for SOS structure. It shows good isolating properties. Comparing with silicon, its higher melt temperature makes this heteroepitaxial structure more sustainable for later high temperature device fabricate process. GaN and AlN are both wide band semiconductor, they are deposited on sapphire as buffer layer by the means of metal organic chemical vapor deposition to decrease the lattice mismatch between the substrate and the epitaxial layer, and SiC films was grown on buffer layer using APCVD. X-ray diffraction and scanning electron microscope are used to study the polytypes and morphology of the film. Some hexangular etching pits with size of 1 - 5 micrometers are found on the films.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408327
Show Author Affiliations
Jianping Wang, Xidian Univ. (China)
Yue Hao, Xidian Univ. (China)
Jun Peng, Xidian Univ. (China)

Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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