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Proceedings Paper

Influence of oxygen incorporation on beryllium- and silicon-doped InP grown by solid source molecular beam epitaxy
Author(s): Ning Xiang; Jari Likonen; Jani Turpeinen; Mika J. Saarinen; Mika Toivonen; Markus Pessa
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Paper Abstract

The effect of oxygen incorporation on electrical and optical properties of Be- and Si-doped InP grown by solid source molecular beam epitaxy has been studied. Oxygen was observed to reduce both the Be and Si doping efficiencies in InP and to introduce recombination centers that degrade the photoluminescence property. The compensation in Be-InP was more pronounced than in Si-InP. With high oxygen impurity concentration, Be-InP was found to be n-type in Hall measurements. Electrical inactivity of Be is likely due to the formation of Be-O complexes in InP. Oxygen was originated from the phosphorous source and could be reduced by employing lowered phosphorous cracker temperature.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408321
Show Author Affiliations
Ning Xiang, Tampere Univ. of Technology (Finland)
Jari Likonen, Technical Research Ctr. of Finland (Finland)
Jani Turpeinen, Tampere Univ. of Technology (Finland)
Mika J. Saarinen, Tampere Univ. of Technology (Finland)
Mika Toivonen, Tampere Univ. of Technology (Finland)
Markus Pessa, Tampere Univ. of Technology (Finland)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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