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Proceedings Paper

Sputtering deposition and optical properties of SiCxNy films
Author(s): Xingcheng Xiao; Lixin Song; Weihui Jiang; Xingfang Hu
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Paper Abstract

In this paper, the SiCxNy films were prepared by RF magnetron sputtering with SiC target. The influences of the basic process parameters on the deposition rate and optical properties were studied. The results revealed the formation of a complex network among Si, C and N. The deposition rate decreased with increasing partial pressure of nitrogen. The increase of N2 flux resulted in the wider optical gap. The greater the sputtering power, the higher the deposition rate and the narrower the optical band gap.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408319
Show Author Affiliations
Xingcheng Xiao, Shanghai Institute of Ceramics (China)
Lixin Song, Shanghai Institute of Ceramics (China)
Weihui Jiang, Shanghai Institute of Ceramics (China)
Xingfang Hu, Shanghai Institute of Ceramics (China)

Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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