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Proceedings Paper

Nitrogen-doped plasma-enhanced CVD amorphous carbon: processes and properties
Author(s): Steven A. Voight; Steven M. Smith; Harland G. Tompkins; Andy Hooper; A. Talin
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Paper Abstract

In this work we discuss thin film amorphous carbon which is deposited in a dual frequency plasma enhanced CVD system with a nitrogen-containing ambient. Unlike most carbon films deposited using PECVD, the films in this study were deposited on the grounded electrode and therefore subject to little energetic bombardment during growth. Methane was used as the carbon-containing precursor. We illustrate some potential applications for this type of film and discuss the effect of various process parameters on resulting film properties, such as optical constants, stoichiometry, and chemical bonding and structure.

Paper Details

Date Published: 29 November 2000
PDF: 8 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408318
Show Author Affiliations
Steven A. Voight, Motorola (United States)
Steven M. Smith, Motorola (United States)
Harland G. Tompkins, Motorola (United States)
Andy Hooper, Motorola (United States)
A. Talin, Motorola (United States)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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