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Proceedings Paper

Optical characterization of synthetic diamond films
Author(s): Takashi Kita; Seiji Nagahara; Taneo Nishino
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Paper Abstract

Synthetic diamond films grown by vapor-phase growth have attracted much interest because of promising applications in electronic devices. Improvement of film quality by reducing the number of crystal defects and impurities is the most important prerequisite for successful device applications. Defects and impurities produce deep states in the wide band gap of diamond. These mid-gap states decrease the efficiency of edge emission and exhibit `visible' luminescence. Recently, it has become possible to obtain high-quality diamond films that show phonon-assisted exciton recombination radiation from the indirect edge. The analysis of edge emission spectra can be used to characterize crystallinity and purity of synthetic diamond films. We have studied band edge structure of synthetic diamond films of differential reflectance spectroscopy as well as cathodoluminescence. The differential reflectance spectrum obtained from a high-pressure-high-temperature synthetic diamond shows interband transitions assisted by phonon emission. On the other hand, chemical vapor deposited diamond films show a zero-phonon exciton transition together with the phase-assisted transitions. This indicates light absorption by bound excitons due to crystal defects. Furthermore, we have investigated higher interband transitions localized in the Brillouin zone by a newly developed electron-beam electroreflectance spectroscopy.

Paper Details

Date Published: 29 November 2000
PDF: 5 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408316
Show Author Affiliations
Takashi Kita, Kobe Univ. (Japan)
Seiji Nagahara, Kobe Univ. (Japan)
Taneo Nishino, Kobe Univ. (Japan)

Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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