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Proceedings Paper

Magnetic properties of amorphous TbFeCo films
Author(s): Yong Zhou; Chunsheng Yang; Di Zhou; Xiaolin Zhao
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Paper Abstract

The effects of sputtering conditions on magnetic properties of amorphous TbFeCo films were investigated. By fixing the current set, the sputtering power reduces with the increase of sputtering Ar pressure, and the coercivity increases with the decrease of sputtering power, in contrast to the magnetization decreases. Film deposited at an Ar pressure of 0.42 Pa and a sputtering power of 7 W develops very good magnetization loops and high perpendicular anisotropy at room and low temperature. Magnetization measurements show that the in-plane magnetization loop at 10 K becomes larger with the increase of saturation magnetic field. This may be caused by the disorder of Tb atoms. At fixed Ar pressure, the coercivity decreases with the increasing sputtering power an the magnetization loop becomes narrow at high sputtering power. The effect of film thickness on magnetization loops is also studied.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408296
Show Author Affiliations
Yong Zhou, Shanghai Jiao Tong Univ. (China)
Chunsheng Yang, Shanghai Jiao Tong Univ. (China)
Di Zhou, Shanghai Jiao Tong Univ. (China)
Xiaolin Zhao, Shanghai Jiao Tong Univ. (China)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications

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