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Proceedings Paper

Computer simulation of Nb2O5/SiO2 sputtering process for narrow-band optical filter
Author(s): Mike Xu Ouyang; L. D. Kinney; Emmanuel C. Onyiriuka
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Paper Abstract

Sputter deposition process conditions for dielectric metal oxide films was simulated by SIMSPUDTM (Simulation of Sputtered Distributions). Collision cross-sections of Nb and Si were found to be 50 angstroms2 and 55 angstroms2 respectively by pinhole experiment and simulation. Film thickness distributions of Nb and Si films vs their oxide counterparts (Nb2O5 vs SiO2) showed that the deposition rate ratio of SiO2 to Si is 2.03 - 2.05:1 while Nb to Nb2O5 is 1.76 - 1.77:1. It was determined that the current density distribution and oxygen flow for reactive sputtering had great influence on film stoichiometry and thickness. It was also found that the ion source flattened the oxide film thickness. SIMSPUD was shown to be a desirable tool for new product development and as such could be beneficial in the design of the next generation PVD system.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408294
Show Author Affiliations
Mike Xu Ouyang, Corning Inc. (United States)
L. D. Kinney, Corning Inc. (United States)
Emmanuel C. Onyiriuka, Corning Inc. (United States)

Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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