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Proceedings Paper

Preparation and properties of IrO2 thin films grown by dc magnetron reactive sputtering method
Author(s): Shijun Wang; Aili Ding; Pingsun Qiu; Xiyun He; Weigen Luo
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Paper Abstract

Iridium oxide (IrO2) thin films were successfully grown on SiO2/Si(100) substrate by DC magnetron reactive sputtering method with an Ir target (99.99% purity). The effects of sputtering parameters and annealing conditions on the crystalline nature and morphology of IrO2 thin films were discussed. High orientation at (110) or (200) of IrO2 thin films were occurred by annealed films. For fatigue properties, PZT thin films using an IrO2 electrode have largely improved than that using a Pt/Ti electrode.

Paper Details

Date Published: 29 November 2000
PDF: 4 pages
Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); doi: 10.1117/12.408293
Show Author Affiliations
Shijun Wang, Shanghai Institute of Ceramics (China)
Aili Ding, Shanghai Institute of Ceramics (China)
Pingsun Qiu, Shanghai Institute of Ceramics (China)
Xiyun He, Shanghai Institute of Ceramics (China)
Weigen Luo, Shanghai Institute of Ceramics (China)


Published in SPIE Proceedings Vol. 4086:
Fourth International Conference on Thin Film Physics and Applications
Junhao Chu; Pulin Liu; Yong Chang, Editor(s)

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