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Proceedings Paper

128 X 128 FPAs on MBE-grown CdHgTe layers for medium- and far-IR range
Author(s): Vladimir V. Vasilyev; Sergey A. Dvoretsky; Dmitrii G. Esaev; T. I. Zakhariash; Anatoly G. Klimenko; A. I. Kozlov; I. V. Marchishin; Victor N. Ovsyuk; N. Kh. Talipov; Yuri G. Sidorov; A. O. Suslyakov
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Paper Abstract

For manufacture of focal plane arrays (FPA) the MBE grown heteroepitaxial structures GaAs/CdZnTe/CdHgTe with cut-off wavelength ((lambda) c) of 6.0 and 8.7 micrometers were used. The photosensitive CdHgTe layer was grown with special composition profile in depth being continuously controlled in the growth process. On these structures by the method of low temperature planar technology the 128x128 photodetector arrays were manufactured, including the ones with low series resistance for the far IR range. The read-out circuit was designed and silicon array multiplexers were manufactured CMOS technology with n- pocket. The read-out circuit allows to control the accumulation time at a fixed frame time. The technology of hybrid assembling with continuous control over cold welding on indium bumps was designed and the 128X128 FPAs were fabricated by means of this technology. The noise-equivalent difference of temperature (NEDT) value was 19.7 and 27.2 mK for modules with (lambda) c=6.0 micrometers and 8.7 micrometers correspondingly at the background temperature 77K. Using the IR camera the examples of IR images obtained by the fabricated FPAs with the 128x128 frame format are demonstrated.

Paper Details

Date Published: 28 November 2000
PDF: 7 pages
Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); doi: 10.1117/12.407757
Show Author Affiliations
Vladimir V. Vasilyev, Institute of Semiconductor Physics (Russia)
Sergey A. Dvoretsky, Institute of Semiconductor Physics (Russia)
Dmitrii G. Esaev, Institute of Semiconductor Physics (United States)
T. I. Zakhariash, Institute of Semiconductor Physics (Russia)
Anatoly G. Klimenko, Institute of Semiconductor Physics (Russia)
A. I. Kozlov, Institute of Semiconductor Physics (Russia)
I. V. Marchishin, Institute of Semiconductor Physics (Russia)
Victor N. Ovsyuk, Institute of Semiconductor Physics (Russia)
N. Kh. Talipov, Institute of Semiconductor Physics (Russia)
Yuri G. Sidorov, Institute of Semiconductor Physics (Russia)
A. O. Suslyakov, Institute of Semiconductor Physics (Russia)


Published in SPIE Proceedings Vol. 4340:
16th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

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