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Proceedings Paper

High-temperature magnetothermoelectrical extruded material on the basis of Bi85Sb15 solid solution
Author(s): M. M. Tagiyev
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Paper Abstract

High effective and sufficiently firm materials on the basis of the Bi(subscript 85)Sb(subscript 15) solid solution doped by Pb impurities have been obtained and investigated. It is shown, that with growth of a doping degree values of thermoelectrical figure of merit (Z) at first grown up to 0,005 at %Pb of and at this concentration reaches value equal approximately 5,0x10(superscript -3)K(superscript -1 at approximately 200K, and then decreases. In a magnetic field the greatest values of Z for the samples of p-type has one doped by 0,05 at of %Pb, and Z reaches value approximately 0,84x10(superscript -3) K(superscript -1) at approximately 80K.

Paper Details

Date Published: 28 November 2000
PDF: 4 pages
Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); doi: 10.1117/12.407756
Show Author Affiliations
M. M. Tagiyev, Institute of Photoelectronics (Azerbaijan)


Published in SPIE Proceedings Vol. 4340:
16th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

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