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Proceedings Paper

IR detector performance in an area array
Author(s): Vikram Dhar; Vishnu Gopal; Vikram Kumar
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Paper Abstract

The performance of an IR detector in an area array has been studied by numerically solving the 2-D diffusion equation for thermal and photo-generated carriers. The zero-bias resistance area product, RoA, quantum efficiency (eta) and the noise equivalent temperature difference, NETD, for diodes of different size and junction depth have been calculated for long wavelength infrared (LWIR) HgCdTe n+-on-p diffusion-limited diodes in the back-side illuminated configuration. The results of RoA have been compared with analytical expressions, both in special and general cases. The highest RoA is obtained for low junction depths and diodes with very little dead space. Small diodes have low (eta) , but their integration time can be increased. The temporal NETD is then almost independent of diode geometry. In the 2-D calculations, thermally generated carriers and photocarriers that originate under the junction (the normal current) as well as those that originate from around the junction (the lateral current) have been incorporated. The above study has been carried out using a uniform grid in the solution of the diffusion equation to obtain the carrier concentration profiles. The calculation of the diffusion currents- of both optical and thermally generated carriers- has been done using trapezoidal grid points, which are better suited to the symmetry of a diode in an area array. The present results are compared with previous calculations in which a uniform grid was used in the complete calculations. The results of RoA and (eta) differ by as much as 25% between the uniform and trapezoidal grids.

Paper Details

Date Published: 28 November 2000
PDF: 18 pages
Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); doi: 10.1117/12.407754
Show Author Affiliations
Vikram Dhar, Solid State Physics Lab. (India)
Vishnu Gopal, Solid State Physics Lab. (India)
Vikram Kumar, Solid State Physics Lab. (India)


Published in SPIE Proceedings Vol. 4340:
16th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

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