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Proceedings Paper

128 X 128 IR FPA based on GaAs/AlGaAs MQW
Author(s): Michail A. Dem'yanenko; I. V. Marchishin; Anatoly G. Klimenko; A. I. Kozlov; Victor N. Ovsyuk; Anna P. Savchenko; Aleksandr I. Toropov; Valerii V. Shashkin
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Paper Abstract

In this paper the experimental results on designing of 128X128 FPA for far IR spectrum range are presented. The module is a hybrid assembly of the photodetectors array based on GaAs/AlGaAs multiquantum wells and silicon multiplexer. The noise equivalent difference of temperature of the photodetector module NEDT=0.067 K at T=65 K.

Paper Details

Date Published: 28 November 2000
PDF: 4 pages
Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); doi: 10.1117/12.407743
Show Author Affiliations
Michail A. Dem'yanenko, Institute of Semiconductor Physics (Russia)
I. V. Marchishin, Institute of Semiconductor Physics (Russia)
Anatoly G. Klimenko, Institute of Semiconductor Physics (Russia)
A. I. Kozlov, Institute of Semiconductor Physics (Russia)
Victor N. Ovsyuk, Institute of Semiconductor Physics (Russia)
Anna P. Savchenko, Institute of Semiconductor Physics (Ukraine)
Aleksandr I. Toropov, Institute of Semiconductor Physics (Russia)
Valerii V. Shashkin, Institute of Semiconductor Physics (Russia)


Published in SPIE Proceedings Vol. 4340:
16th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

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