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Proceedings Paper

Particulars of the growth of epitaxial films of PbSe1-xTex
Author(s): H. R. Nuriyev; M. I. Abdullayev; S. S. Farzaliyev
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Paper Abstract

The features of growth epitaxial films PbSe1-xTex (x=0,2) on substrates BaF2 by the epitaxy of molecular beam method are investigated. The optimum meanings of speed of condensation are certain and the temperatures of a substrate at which turn out of a film with perfect structure. The complex research of features of growth films in correlation with their physical properties is carried out. The structure films was supervised electronographic, X-ray diffractometric and electron-microscope by methods. It is established, that epitaxial films PbSe1-xTex on BaF2 (111) substrates grow by plane (111). It revealed, that epitaxial films brought up at temperatures of substrate 673K have monocrystal structure with half-width X- ray diffraction swing W1/2=80 divided by 100 and smooth surface without secondary inclusions.

Paper Details

Date Published: 28 November 2000
PDF: 3 pages
Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); doi: 10.1117/12.407741
Show Author Affiliations
H. R. Nuriyev, Institute of Photoelectronics (Azerbaijan)
M. I. Abdullayev, Institute of Photoelectronics (Azerbaijan)
S. S. Farzaliyev, Institute of Photoelectronics (Azerbaijan)


Published in SPIE Proceedings Vol. 4340:
16th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

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