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Proceedings Paper

Structural perfection diagnostics of narrow-gap photosensitive semiconductor junctions by electron diffraction
Author(s): Alexandr D. Britov; Alexander I. Dirochka; Pavel S. Serebrennikov; N. A. Suleimanov; A. S. Kononov; Igor P. Suprun
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Paper Abstract

In the work are studied structural, electrical and optical properties of film heterojunctions p-Pb1-xSnxTe-n- PbTe obtained by condensation of molecular beams in vacuum approximately 10-6mm mercury pressure. It is determined that diffusion fringes intensity on diffraction patterns are different depending on thickness of films (d) and temperature of films growing (Tf). The intensity of diffusion fringes also depends on survey temperature (Ts). The correlation between intensity of diffusion fringes on electron diffraction patterns and photosensitivity of heterojunctions Pb1-xSnxTe-PbTe is found.

Paper Details

Date Published: 28 November 2000
PDF: 3 pages
Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); doi: 10.1117/12.407740
Show Author Affiliations
Alexandr D. Britov, Research, Development, and Production Ctr. ORION (Russia)
Alexander I. Dirochka, Research, Development, and Production Ctr. ORION (Russia)
Pavel S. Serebrennikov, Research, Development, and Production Ctr. ORION (Russia)
N. A. Suleimanov, Research, Development, and Production Ctr. ORION (Russia)
A. S. Kononov, Research, Development, and Production Ctr. ORION (Russia)
Igor P. Suprun, Military Univ. of Radiation, Chemical and Bacteriological Protection (Russia)


Published in SPIE Proceedings Vol. 4340:
16th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

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