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Proceedings Paper

Material aspects of OEIC development based on A2B6 compounds on silicone and sapphire
Author(s): Oleg N. Ermakov; Valery N. Martynov; Alexey E. Ashomko
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Paper Abstract

General trends and different technological approaches to modern optoelectronic integrated circuits (OEICs) development and fabrication are considered. It is emphasized that from point of view multifunctional OEICs realization direct gap semiconductor materials both A3B5 and A2B6 are primarily desirable. Data are presented for optical, luminescent and photoelectric properties of several A2B6 compounds, including CdS, CdSe, CdSSe, CdTe. Material aspects are discussed imposing technological limitations for A2B6 compounds utilization in OEICs development and fabrication.

Paper Details

Date Published: 28 November 2000
PDF: 7 pages
Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); doi: 10.1117/12.407739
Show Author Affiliations
Oleg N. Ermakov, Saphir Joint Stock Co. (Russia)
Valery N. Martynov, Moscow Steel and Alloys Institute (Russia)
Alexey E. Ashomko, Moscow Steel and Alloys Institute (Russia)

Published in SPIE Proceedings Vol. 4340:
16th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

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