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Proceedings Paper

Fabrication details of GaInAsSb-based photodiode heterostructures
Author(s): E. V. Kunitsyna; Igor A. Andreev; Maya P. Mikhailova; Ya. A. Parkhomenko; Yury P. Yakovlev
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Paper Abstract

In the present paper, we report the results of our investigation, which aims to upgrade the GaInAsSb-based photodiode heterostructure technology. The main requirements on GaInAsSb solid solutions from the viewpoint of near-infrared photodiode applications are considered. Such methods for decreasing a carrier concentration in the epitaxial layers of the solid solutions as doping with a donor impurity, the use of rare-earth element Yb, growth from lead containing melt are discussed. The possibility of decreasing the GaInAsSb band gap resulting in long- wavelength photosensitivity threshold shift is demonstrated. We have made GaInAsSb/GaAlAsSb photodiodes with the long- wavelength photosensitivity threshold of 2.4 micrometers . At -2V reverse bias a lowest dark current density is 3x10-3 A/cm2, and the quantum efficiency is 60-70% at (lambda)=2.0-2.1micrometers .

Paper Details

Date Published: 28 November 2000
PDF: 10 pages
Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); doi: 10.1117/12.407738
Show Author Affiliations
E. V. Kunitsyna, A.F. Ioffe Physico-Technical Institute (Russia)
Igor A. Andreev, A.F. Ioffe Physico-Technical Institute (Russia)
Maya P. Mikhailova, A.F. Ioffe Physico-Technical Institute (Russia)
Ya. A. Parkhomenko, A.F. Ioffe Physico-Technical Institute (Russia)
Yury P. Yakovlev, A.F. Ioffe Physico-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 4340:
16th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

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