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Proceedings Paper

Optical properties of Pb1-xSnxSe epitaxial films
Author(s): Eldar Yu. Salaev; H. R. Nuriyev; Kh. D. Jalilova; N. V. Faradjev
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Paper Abstract

The optical absorption edge on the indium-doped (NIn less than or equal to 0,8 weight%) Pb1-xSnxSe(X=0.07) epitaxial layers have been investigated. The observed movement of intrinsic absorption edge in the short-wave length region spectrum is interpreted by the presence of indium impurity, which lead to some increasing of the gap width Eg in Pb1-xSnxSe. It has been found, that the inter-zone absorption edge in the weak absorption region Pb1-xSnxSe(In) is conditioned by nondirect optic transitions. The magnitudes of Eg and Eg/dT have been calculated and are described by (square root)K=f(E) curve.

Paper Details

Date Published: 28 November 2000
PDF: 4 pages
Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); doi: 10.1117/12.407733
Show Author Affiliations
Eldar Yu. Salaev, Institute of Photoelectronics (Azerbaijan)
H. R. Nuriyev, Institute of Photoelectronics (Azerbaijan)
Kh. D. Jalilova, Institute of Photoelectronics (Azerbaijan)
N. V. Faradjev, Institute of Photoelectronics (Azerbaijan)


Published in SPIE Proceedings Vol. 4340:
16th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

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