Share Email Print

Proceedings Paper

Impact of the photoinduced space charge upon semiconductor photoresponse dependence on the concentration of recombination centers under weak optical radiation
Author(s): Vyacheslav A. Kholodnov; Albina A. Drugova
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The results of theoretical analysis of influence of the photo-induced space charge upon the photo-carrier initiation, the Dember's effect (photo-EMF) and the photocurrent amplification in the case of inter-band absorption of weak optical radiation and non-equilibrium carrier recombination via deep impurity are presented. The model of a single recombination deep acceptor level and shallow donor impurity is considered. The tasks (including the effect of the gigantic splash of semiconductor photoconductivity upon an increase in the concentration of recombination centers) are solved beyond the commonly used approximation of quasi-neutrality. It is shown that the solutions beyond the approximation of quasi-neutrality may be basically differed from the quasi-neutral solutions.

Paper Details

Date Published: 28 November 2000
PDF: 27 pages
Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); doi: 10.1117/12.407731
Show Author Affiliations
Vyacheslav A. Kholodnov, Research, Development, and Production Ctr. ORION (Russia)
Albina A. Drugova, Research, Development, and Production Ctr. ORION (Russia)

Published in SPIE Proceedings Vol. 4340:
16th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

© SPIE. Terms of Use
Back to Top