Share Email Print
cover

Proceedings Paper

Dark current blocking in semiconductors with one type conduction
Author(s): A. V. Dvurechenskii; A. P. Kovchavtzev; G. L. Kurychev; I. A. Ryazantsev
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The paper suggests a novel concept of dark conduction blocking in semiconductors with one type conduction comprising a series of (p++-p -p+ - p++) junction of the type. Blocking is caused by the existence of a potential barrier in the region of the P+ -p junction. The barrier is positioned in crystal at a depth of 10-15 micrometers from one of the contacts. As a consequence, the external electric shielded field is blocked by the space-charge region of the junction resulting in the absence of charge transport through the valence band when the structure is not illuminated. IR-photodetectors ((lambda) approximately 1-6,5 micrometers ) fabricated on p-type single crystal silicon are characterized by photoresposivity S(lambda approximately 10-0,1 A/W and dark current density <5.10-9 A/cm2 at T approximately 80 K.

Paper Details

Date Published: 28 November 2000
PDF: 7 pages
Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); doi: 10.1117/12.407729
Show Author Affiliations
A. V. Dvurechenskii, Institute of Semiconductor Physics (Russia)
A. P. Kovchavtzev, Institute of Semiconductor Physics (Russia)
G. L. Kurychev, Institute of Semiconductor Physics (Russia)
I. A. Ryazantsev, Institute of Semiconductor Physics (Russia)


Published in SPIE Proceedings Vol. 4340:
16th International Conference on Photoelectronics and Night Vision Devices

© SPIE. Terms of Use
Back to Top