Share Email Print
cover

Proceedings Paper

Metastable behavior of current-voltage characteristics in Hg1-xCdxTe p-n junctions
Author(s): Oleg A. Soltanovich; Eugene B. Yakimov; Nikolai A. Yarykin
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The n+-p junctions formed by ion implantation in p- type Hg0.6Cd0.4Te crystals are studied. It is found that leakage current of the structures at liquid nitrogen temperature is strongly dependent on the conditions during cooling from room temperature; leakage current is small after bias-off cooling and several decades higher after bias-on cooling. Both states are stable at 78 K during hours independent of bias; the reversible transitions between the states can be performed by room temperature annealing and subsequent cooling under appropriate bias. Investigations of the structures by the DLTS technique show that the variations of leakage current are accompanied by transformations of deep level spectrum of the crystal and, therefore, can be associated with the reconstruction of metastable centers located in the space charge region of the junctions. The kinetics of the metastable transitions indicates possible spreading of the transition activation energy due to local inhomogeneity of the alloy composition.

Paper Details

Date Published: 28 November 2000
PDF: 4 pages
Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); doi: 10.1117/12.407715
Show Author Affiliations
Oleg A. Soltanovich, Institute of Microelectronics Technology (Russia)
Eugene B. Yakimov, Institute of Microelectronics Technology (Russia)
Nikolai A. Yarykin, Institute of Microelectronics Technology (Russia)


Published in SPIE Proceedings Vol. 4340:
16th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

© SPIE. Terms of Use
Back to Top