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Proceedings Paper

Analytical calculation of dark voltage-current characteristics of double-layer heterojunction photodiode
Author(s): Bogdan S. Sokolovsky; Volodymyr K. Pysarevsky
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Paper Abstract

An analytical expression for dark voltage-current characteristics (VCC) of double layer heterojunction (DLHJ) photodiode. It is shown that spatial inhomogeneity of energy band gap in photodiode base region allows to substantially increase the reverse current connected with thermal generation of carriers both in the base region and at the contacts. In the case when wide gap layer is remote from the metallurgical edge of p-n junction at the distance comparable with the thickness of the space charge region (SCR) a portion of negative differential resistance (NDR) may appear on the reverse branch of VCC.

Paper Details

Date Published: 28 November 2000
PDF: 6 pages
Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); doi: 10.1117/12.407714
Show Author Affiliations
Bogdan S. Sokolovsky, Ivan Franko National Univ. of Lviv (Ukraine)
Volodymyr K. Pysarevsky, Ivan Franko National Univ. of Lviv (Ukraine)


Published in SPIE Proceedings Vol. 4340:
16th International Conference on Photoelectronics and Night Vision Devices

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