Share Email Print
cover

Proceedings Paper

Ultraviolet photodetectors based on GaN and AlxGa1-xN epitaxial layers
Author(s): N. M. Shmidt; W. V. Lundin; A. V. Sakharov; A. S. Usikov; E. E. Zavarin; A. V. Govorkov; A. Ya. Polyakov; N. B. Smirnov
Format Member Price Non-Member Price
PDF $17.00 $21.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The effect of epilayer structural peculiarities on electro- physical properties of the epilayers and on parameters of the UV photodetectors has been investigated. Random distribution of charged centers, which is associated with boundaries of mosaic structure domains being typical of III- nitrides, has been shown to result in a low Schottky barrier height, a high leakage current, and persistent photoconductivity in an undoped GaN. The introduction of low Si concentration minimized the effect as well as allows the Schottky barrier height to be obtained close to the difference between work functions of GaN and metal. The characteristics of Al0,1Ga0.9N Schottky barrier photodetectors have been given. MSM photodetectors and Schottky barrier photodetectors over spectral range 200-365 nm with characteristics close to those of the best analogs, in particular, leakage current density of about 10-8A cm-2, have been obtained using domestic GaN grown by MOCVD on sapphire substrates of (0001) orientation.

Paper Details

Date Published: 28 November 2000
PDF: 5 pages
Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); doi: 10.1117/12.407713
Show Author Affiliations
N. M. Shmidt, A.F. Ioffe Physico-Technical Institute (Russia)
W. V. Lundin, A.F. Ioffe Physico-Technical Institute (Russia)
A. V. Sakharov, A.F. Ioffe Physico-Technical Institute (Russia)
A. S. Usikov, A.F. Ioffe Physico-Technical Institute (Russia)
E. E. Zavarin, A.F. Ioffe Physico-Technical Institute (Russia)
A. V. Govorkov, State Institute of Rare Metals (Russia)
A. Ya. Polyakov, State Institute of Rare Metals (Russia)
N. B. Smirnov, State Institute of Rare Metals (Russia)


Published in SPIE Proceedings Vol. 4340:
16th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

© SPIE. Terms of Use
Back to Top