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Proceedings Paper

Characterization of silicon carbide detectors and dosimeters
Author(s): Mara Bruzzi; C. Lanzieri; Filipo Nava; S. Russo; Silvio Sciortino; Paolo Vanni
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Paper Abstract

A preliminary study of the response of SiC devices to 22 MeV electrons, 6 MV photon beams from a linear accelerator and to (alpha) -particles from a 241Am source is presented in this work in view to assess the feasibility of SiC-based detectors and dosimeters. The devices used are 4H-SiC epitaxial n-type layer deposited onto a 4H-SiC n+type substrate wafer doped with nitrogen. Schottky contacts have been formed by deposition of a 1000 angstrom gold film on the epitaxial layer. Ti/Pt/Au ohmic contacts have been deposited on the rear side of the detector. The released charge has been observed to increase linearly with the electron dose up to 10 Gy. A linear dependence of the current response of the devices has been also observed as a function of the photon dose-rate in the 2-7 Gy/min range. A preliminary study of the photoconductive response to UV irradiation of semi-insulating 6H-SiC substrates is also reported on samples, with a bulk resistivity of approximately equals 1011 (Omega) cm, produced with a modified Lely technique.

Paper Details

Date Published: 21 November 2000
PDF: 7 pages
Proc. SPIE 4141, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics II, (21 November 2000); doi: 10.1117/12.407603
Show Author Affiliations
Mara Bruzzi, INFN Firenze (Italy)
C. Lanzieri, Alenia Marconi Systems (Italy)
Filipo Nava, Univ. degli Studi di Modena and INFN Bologna (Italy)
S. Russo, Azienda Ospedaliera Carregi (Italy)
Silvio Sciortino, INFN Firenze (Italy)
Paolo Vanni, Univ. degli Studi di Modena and INFN Bologna (Italy)


Published in SPIE Proceedings Vol. 4141:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics II
Ralph B. James; Richard C. Schirato, Editor(s)

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