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Proceedings Paper

Reactive pulsed laser deposition assisted by rf discharge plasma
Author(s): Armelle Basillais; Jacky Mathias; Chantal Boulmer-Leborgne; Jacques Perriere
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Paper Abstract

AlN nitride films are grown by reactive pulsed laser ablation of aluminum target in N2 atmosphere. The influence of process parameters such as N2 pressure and laser fluence is investigated. Films are characterized by Rutherford Backscattering Spectroscopy, Nuclear Reaction Analysis, X Ray Diffraction and X Ray Photoelectron Spectroscopy. O contamination appears in the film and its origin is discussed. To enhance N2 dissociation, a RF discharge device is coupled to the deposition chamber. Its effect on thin film composition is studied. Emission spectroscopy is performed in order to find the best RF working point for N2 molecule dissociation and to understand species transport from the target towards the substrate as a function of process parameters. Thin film with a stoichiometry near to Al1N1 can be obtained with low O contamination working with 6 J/cm2 laser fluence, 0.01 mbar N2 with RF discharge added.

Paper Details

Date Published: 16 August 2000
PDF: 7 pages
Proc. SPIE 4065, High-Power Laser Ablation III, (16 August 2000); doi: 10.1117/12.407326
Show Author Affiliations
Armelle Basillais, Univ. d'Orleans (France)
Jacky Mathias, Univ. d'Orleans (France)
Chantal Boulmer-Leborgne, Univ. d'Orleans (France)
Jacques Perriere, Univ. Pierre et Marie Curie (France) and Univ. Denis Diderot (France)


Published in SPIE Proceedings Vol. 4065:
High-Power Laser Ablation III
Claude R. Phipps, Editor(s)

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