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Proceedings Paper

Defect-strain instability and formation of periodic ablation structure on semiconductor surface under the action of ultrashort laser pulses
Author(s): Vladimir I. Emel'yanov; Denis V. Babak
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Paper Abstract

The theory of defect-strain instability with formation of periodic surface relief in semiconductors irradiated by ultrashort ((tau) p equals 10-13 s) laser pulse is developed. The period and time of formation of surface relief are calculated. Regimes of multipulse laser ablation leading to formation of either smooth surface or arrays of surface relief spikes are considered and corresponding experimental results are interpreted from the viewpoint of the developed theory.

Paper Details

Date Published: 16 August 2000
PDF: 13 pages
Proc. SPIE 4065, High-Power Laser Ablation III, (16 August 2000); doi: 10.1117/12.407311
Show Author Affiliations
Vladimir I. Emel'yanov, Moscow State Univ. (Russia)
Denis V. Babak, Moscow State Univ. (Russia)

Published in SPIE Proceedings Vol. 4065:
High-Power Laser Ablation III
Claude R. Phipps, Editor(s)

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