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Proceedings Paper

Si-based multilayers with high thermal stability
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Paper Abstract

The effect of elevated temperature on the structural stability of Mo/Si, Mo2C/Si and Mo/Mo2C/Si/Mo2C (dMo2C equals 0.6 nm) multilayers was investigated. The multilayers deposited by dc magnetron sputtering are annealed at temperatures ranging from 200 degree(s)C to 700 degree(s)C. The multilayer mirrors were designed for normal incidence reflectivity at about 13 nm wavelength. X-ray scattering, transmission electron microscopy and atomic force microscopy were used for characterization of the multilayer structures. The results are correlated to the measured normal incidence reflectivity using synchrotron radiation. We achieved maximal normal incidence reflectivities of 61.8% at 13.0 nm wavelength for Mo2C/Si and 59.9% at 13.3 nm for Mo/Si multilayers having Mo2C diffusion barriers. While the reflectivity of Mo/Si multilayers decreased considerably after annealing above 300 degree(s)C the Mo2C/Si multilayers showed a superior thermal stability up to 600 degree(s)C.

Paper Details

Date Published: 8 November 2000
PDF: 10 pages
Proc. SPIE 4146, Soft X-Ray and EUV Imaging Systems, (8 November 2000); doi: 10.1117/12.406670
Show Author Affiliations
Norbert Kaiser, Fraunhofer-Institut fuer Angewandte Optik und Feinmechanik (Germany)
Sergey A. Yulin, Fraunhofer-Institut fuer Angewandte Optik und Feinmechanik (Germany)
Torsten Feigl, Fraunhofer-Institut fuer Angewandte Optik und Feinmechanik (Germany)


Published in SPIE Proceedings Vol. 4146:
Soft X-Ray and EUV Imaging Systems
Winfried M. Kaiser; Richard H. Stulen, Editor(s)

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