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Proceedings Paper

Spatial distributions of hole traps and image latency in InSb focal plane arrays
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Paper Abstract

Spatial distributions of hole trap sites on a quasipixel level in InSb arrays for SIRTF are examined. The dependence of flux, fluence, and applied bias on image latency is investigated, and experimental results are presented and discussed. Models of linearity and capacitance are compared with experimental results. We find increasing the depletion width in a light exposed pixel by larger reverse biasing decreases the trapped charge (or latency) in that pixel by factors of approximately 3. Assumed pixel geometries lead to an apparent spatial density of active trap sites that falls quickly with distance from the implants.

Paper Details

Date Published: 16 November 2000
PDF: 14 pages
Proc. SPIE 4131, Infrared Spaceborne Remote Sensing VIII, (16 November 2000); doi: 10.1117/12.406541
Show Author Affiliations
Robert G. Benson, Univ. of Rochester (United States)
William J. Forrest, Univ. of Rochester (United States)
Judith L. Pipher, Univ. of Rochester (United States)
William J. Glaccum, Univ. of Rochester (United States)
Steven Lawrence Solomon, Raytheon Co. (United States)

Published in SPIE Proceedings Vol. 4131:
Infrared Spaceborne Remote Sensing VIII
Marija Strojnik; Bjorn F. Andresen, Editor(s)

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