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Proceedings Paper

Cryogenic standard CMOS sensor readout electronics
Author(s): Olivier Charlier; Thys Cronje; Chris A. Van Hoof
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Paper Abstract

Hybrid sensors performance critically depends on the performance of the analog read-out electronics. The analog design methodologies are very well known and documented provided the operating temperature stays above temperatures where carrier freeze-out occurs. Even though the behavior of individual MOS transistors at low temperature, i.e. below 30 K, has been studied in detail, this has not yet led to design guidelines for the design of building blocks and/or complete systems that will operate satisfactorily at these low temperatures. The main challenges are the design of amplifiers with high open-loop gain, low electrical power consumption and low noise. By providing cryogenic design guidelines, this paper tries to bridge the gap that exists between the information available on the MOS transistors and the needs of design engineers confronted with practical problems. The issue of transistor dimensioning using simple models of the MOS transistor will be discussed.

Paper Details

Date Published: 16 November 2000
PDF: 8 pages
Proc. SPIE 4131, Infrared Spaceborne Remote Sensing VIII, (16 November 2000); doi: 10.1117/12.406540
Show Author Affiliations
Olivier Charlier, IMEC (Belgium)
Thys Cronje, IMEC (Belgium)
Chris A. Van Hoof, IMEC (Belgium)


Published in SPIE Proceedings Vol. 4131:
Infrared Spaceborne Remote Sensing VIII
Marija Strojnik; Bjorn F. Andresen, Editor(s)

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