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Proceedings Paper

High-quality photonic device fabrication using low-energy-ion-implantation-induced intermixing
Author(s): Vincent Aimez; Jacques Beauvais; Jean Beerens; Hwi Siong Lim; Seng Lee Ng; Boon Siew Ooi
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Paper Abstract

In this paper we show that low energy ion implantation of lnP based heterostructures for quantum well intermixing is a promising technique for photonic integrated devices. In order to fabricate complex optoelectronic devices with a control of the bandgap profile of the heterostructure there is a list of requirements that have to be fulfilled. We have fhhricatcd high quality discrete blueshifted laser diodes to verify the capability of low energy ion implantation induced intermixing fbr integration. We also fabricated extended cavity lasers with this technique, which demonstrated a reduction of the propagation losses down to 5.3 cm' within the integrated passive waveguides.

Paper Details

Date Published: 15 December 2000
PDF: 8 pages
Proc. SPIE 4087, Applications of Photonic Technology 4, (15 December 2000); doi: 10.1117/12.406460
Show Author Affiliations
Vincent Aimez, Univ. de Sherbrooke (Canada)
Jacques Beauvais, Univ. de Sherbrooke (Canada)
Jean Beerens, Univ. de Sherbrooke (Canada)
Hwi Siong Lim, Nanyang Technological Univ. (Singapore)
Seng Lee Ng, Nanyang Technological Univ. (Singapore)
Boon Siew Ooi, Nanyang Technological Univ. (Singapore)


Published in SPIE Proceedings Vol. 4087:
Applications of Photonic Technology 4
Roger A. Lessard; George A. Lampropoulos, Editor(s)

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