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Proceedings Paper

Optoelectronic switching between luminescence bands in highly doped (Ga,Al) As:Si
Author(s): A. K. Zehe; A. Ramirez
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Paper Abstract

Luminescence of Ga02A103As, highly doped with Si as an amphoteric impurity, was excited by an electron beam at liquid nitrogen temperature. Two luminescence bands with photon energies of about 1 .8 eV and 2. 1 eV are observed, showing peculiar intensity behavior when the external excitation current is switched between a high and a low value. While the highenergy luminescence band shows a common intensity dependence proportional to the exciting current, the low-energy luminescence band intensity diminishes when the beam current is increased. Such an opposite run of the cathodolurninescence intensity at preselected spectral lines just by incrementing or decrementmg the electron beam current implies optoelectronic switching properties. A study is carried out in order to determine the physical nature of the recombination transitions, and the process, which leads to the surprising intensity vs. excitation behavior. Experimental results are analyzed by using a set of rate equations for a free-to-bound and a donor-acceptor pair transition, whereby an AUGER impact ionization process between two occupied neighboring acceptors and a pair-forming donor is incorporated. Under the particular situation of highly doped and almost compensated semiconductors, a bound state may happen at high excitation levels, which involves a close donoracceptor pair and a neighboring second donor or acceptor. The de-excitation behavior of such a bound state resembles characteristics know from AUGER transitions, where an electron and a hole recombine and donate the annihilation energy to a third particle, either a hole or an electron. The consequence is quenching of the radiative recombmation efficiency of the first transition, and under certain circumstances an increase of the recombination intensity of a second channel, which incorporates the thus liberated third particle. Theoretical and experimental results are in good agreement.

Paper Details

Date Published: 15 December 2000
PDF: 6 pages
Proc. SPIE 4087, Applications of Photonic Technology 4, (15 December 2000); doi: 10.1117/12.406454
Show Author Affiliations
A. K. Zehe, B. Univ. Autonoma de Puebla (Mexico)
A. Ramirez, B. Univ. Autonoma de Puebla (Mexico)

Published in SPIE Proceedings Vol. 4087:
Applications of Photonic Technology 4
Roger A. Lessard; George A. Lampropoulos, Editor(s)

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