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Proceedings Paper

Optical properties of GaAs at ZnSe/GaAs/GaAs by phase selection in photoreflectance
Author(s): M. E. Constantino; B. Salazar-Hernandez
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Paper Abstract

GaAs at the ZnSe/GaAs and GaAs/GaAs interfaces of ZnSe/GaAs/GaAs heterostructures is studied by phase selective photoreflectance (PR) spectroscopy. Four samples with ZnSe layers of various thicknesses were examined. We unambiguously determined the origin of two different features observed in the PR spectra by combining in phase and out of phase measurements, with PR measurements employing excitation lasers with different wavelengths. These two features are found to originate at different regions of the heterostructure. One contributing transition is a bulk-like signal, resembling that of bare GaAs, which originates in a region that encompasses the buffer layer/substrate GaAs homointerface. A second contributing signal is attributed to a strained region adjacent to the ZnSe/GaAs heterointerface. Both this second signal and the bulk-like signal show Franz-Keldysh oscillations that allow us to determine the electric field strength at the ZnSe/GaAs and GaAs/GaAs interfaces. It is found that the electric field strength at the heteromterface is larger than that of the hcmointerface.

Paper Details

Date Published: 15 December 2000
PDF: 6 pages
Proc. SPIE 4087, Applications of Photonic Technology 4, (15 December 2000); doi: 10.1117/12.406452
Show Author Affiliations
M. E. Constantino, Univ. Autonoma del Estado de Morelos (Mexico)
B. Salazar-Hernandez, Univ. Autonoma del Estado de Morelos (Mexico)


Published in SPIE Proceedings Vol. 4087:
Applications of Photonic Technology 4
Roger A. Lessard; George A. Lampropoulos, Editor(s)

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