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Proceedings Paper

PECVD technology for low-temperature fabrication of silica-on-silicon-based channel waveguides and devices
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Paper Abstract

Silica based planar technology on silicon has been identified as a very serious source of devices for optical communication s:ystems. Low temperature fabrication of passive and active structures is of special interest as it allows monolithic integration with temperature sensitive semiconductor components on a common silicon platform. Standard PEC\'D (Plasma Enhanced Chemical Vapour Deposition) processing for fabrication of silica based optical waveguides has been investigated to optimize the process parameters. We chose a high power process regime with high ratio between nitrous oxide and silane gas flows as the best conditions. Significant improvement in optical properties of silica-on-silicon planar waveguides for optical communication in the 1.50 -1 .55 tmwavelength range has been obtained.

Paper Details

Date Published: 15 December 2000
PDF: 5 pages
Proc. SPIE 4087, Applications of Photonic Technology 4, (15 December 2000); doi: 10.1117/12.406444
Show Author Affiliations
Lech Wosinski, Royal Institute of Technology (Sweden)
Jayanta K. Sahu, Royal Institute of Technology (Sweden)
Matteo Dainese, Royal Institute of Technology (Sweden)
Harendra Fernando, Royal Institute of Technology (Sweden)


Published in SPIE Proceedings Vol. 4087:
Applications of Photonic Technology 4
Roger A. Lessard; George A. Lampropoulos, Editor(s)

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