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Proceedings Paper

Impulse response of metal-semiconductor-metal photodetector at high energy level of optical illumination
Author(s): Stanislav V. Averine; Yuen Chuen Chan; Seng Lee Ng; Remy Sachot; Yee Loy Lam
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Paper Abstract

A two-dimensional self-consistent time-dependent simulation technique has been used to investigate electron-hole transport processes in the active region of metal-semiconductor-metal photodiode structures (MSM-PD) and to analyze their high-speed response at different energy levels of the optical illumination. Charge accumulation and screening of the dark electric field at high optical excitation levels greatly modify the drift conditions of the photogenerated electrons and holes in the active region of the MSM-PD. This effect gives rise to impulse response distortion and reduced bandwidth and efficiency. Several ways of improving the high-speed response of the MSM-PD are analyzed and discussed. The conditions under which screening of the internal field has no effect on the MSM-PD response are formulated. Modeling data are compared with experimental results.

Paper Details

Date Published: 15 December 2000
PDF: 9 pages
Proc. SPIE 4087, Applications of Photonic Technology 4, (15 December 2000); doi: 10.1117/12.406407
Show Author Affiliations
Stanislav V. Averine, Nanyang Technological Univ. (Singapore)
Yuen Chuen Chan, Nanyang Technological Univ. (Singapore)
Seng Lee Ng, Nanyang Technological Univ. (Singapore)
Remy Sachot, Swiss Federal Institute of Technology (Switzerland)
Yee Loy Lam, Nanyang Technological Univ. (Singapore)


Published in SPIE Proceedings Vol. 4087:
Applications of Photonic Technology 4
Roger A. Lessard; George A. Lampropoulos, Editor(s)

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